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DFB85N06

DnI
Part Number DFB85N06
Manufacturer DnI
Description N-Channel MOSFET
Published Nov 3, 2007
Detailed Description com DFB85N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.010Ω )@VGS=10V Low Gate Charge (Typi...
Datasheet PDF File DFB85N06 PDF File

DFB85N06
DFB85N06

Overview
com DFB85N06 N-Channel MOSFET Features ■ ■ ■ ■ ■ ■ Low RDS(on) (0.
010Ω )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.
Drain BVDSS = 60V 1.
Gate 3.
Source RDS(ON) = 0.
010 ohm ID = 85A General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
TO-263 (D2-Pak) 2 1 3 Absolute Maxi...


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