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DFP630

N-Channel MOSFET

Description

www.DataSheet4U.com DFP630 N-Channel MOSFET Features RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 200V 1.Gate RDS(ON) = 0.4 ohm ID = 9A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced plana...

DnI

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