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DFP730
N-Channel MOSFET
Features
■ ■ ■ ■ ■
2. Drain
RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
1. Gate
BVDSS = 400V RDS(ON) = 1 ohm ID = 6. 5A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM...