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DFR1N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 11. 5 )@VGS=10V 1. Gate {
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N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 11. 5 ohm ID = 1. 1A
3. Source
Gate Charge (Typical 7nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-126 pkg is well suited for charger SMPS and small power inverter application.
TO-126
1
2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM ...