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DFD2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5. 5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
{ {
N-Channel MOSFET
2. Drain
BVDSS = 600V RDS(ON) = 5. 5 ohm ID = 2. 1A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The D-PAK pkg is well suited for charger SMPS and small power inverter application.
D-PAK
1 2 3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EA...