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DFF2N60
N-Channel MOSFET
Description
www.DataSheet4U.com DFF2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A 3. Source General Description This N-channel enhancement mode field-effect power
transistor
using DI semiconductor’s adv...
DnI
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DFF2N60
N-Channel MOSFET
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