www.DataSheet4U.com
DFB7N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 1.0 Ω...
www.DataSheet4U.com
DFB7N60
N-Channel MOSFET
Features
■ ■ ■ ■ ■
N-Channel MOSFET
{
High ruggedness RDS(on) (Max 1.0 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
◀
2. Drain
BVDSS = 600V
●
▲
● ●
RDS(ON) = 1.0 ohm ID = 7.4A
3. Source
{
General Description
This N-channel enhancement mode field-effect power
transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.
TO-263 (D2-Pak)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
600 7.4 4.6 30
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
560 14 4.5 140 1.14 - 55 ~ 150 300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
0.88 62.5
Units
°C/W °C/W °C/W
FEB, 2005....