2SK1606
Power F-MOS FETs
2SK1606
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capa...
Description
Power F-MOS FETs
2SK1606
www.DataSheet4U.com Silicon N-Channel Power F-MOS FET
s Features
q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2 5.5±0.2 2.7±0.2
4.2±0.2
4.2±0.2
s Applications
16.7±0.3
7.5±0.2
q High-speed switching (switching power supply) q For high-frequency power amplification
φ3.1±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5 +0.2 –0.1 0.8±0.1
2.54±0.25 5.08±0.5
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25°C Ta = 25°C
1
2
W °C °C
1: Gate 2: Drain 3: Source EIAJ: SC-67 TO-220 Full Pack Package (a)
3
Single pulse
s Electrical Characteristics (TC = 25°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Avalanche energy capacity Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Symbol IDSS IGSS VDSS EAS* Vth RDS(on) | Yfs | Coss ton tf td(off) Conditions VDS = 360V, VGS = 0 VGS = ±30V, VDS = 0 ID = 1mA, VGS = 0 L = 4.1mH, ID = 8A, VDD = 50V VDS = 25V, ID = 1mA VGS = 10V, ID = 4A VDS = 25V, ID = 4A VDS = 20V, VGS = 0, f = 1MHz 3 450 130 1 0.56 5 1300 160 70 VGS = 10V, ID = 4A VDD = 1...
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