M58PR512LE

www.DataSheet4U.com M58PR256LE M58PR512LE M58PR001LE 256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 96 ns Programming time – 4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices) – Four EFA (extended flash array) blocks of 64 Kbits Dual operations – Program/erase in one bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for block lock-down – Absolute Write protection with VPP = VSS The M58PRxxxLE memories are only available as part of a multichip package device. ■ Wafer ■ ■ ■ Security – 64 bit unique device number – 2112 bit user programmable OTP cells CFI (common Flash interface) 100 000 program/erase cycles per block Electronic signature – Manufacturer code: 20h – 256 Mbit device: 8818 – 512 Mbit device: 8819 – 1 Gbit device: 880F ■ ■ ■ ■ ■ September 2007 Rev 2 1/119 www.st.com 1 www.DataSheet4U.com Contents M58PR256LE, M58PR512LE, M58PR001LE Conten...