M58LT128GST

www.DataSheet4U.com M58LT128GST M58LT128GSB 128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories PRELIMINARY DATA Features Summary ■ SUPPLY VOLTAGE – VDD = 1.7 to 2.0V for program, erase and read – VDDQ = 2.7 to 3.6V for I/O Buffers – VPP = 9V for fast program SYNCHRONOUS / ASYNCHRONOUS READ – Random Access: 110ns – Asynchronous Page Read: 25ns. – Synchronous Burst Read: 52MHz SYNCHRONOUS BURST READ SUSPEND PROGRAMMING TIME – 10µs typical Word program time using Buffer Enhanced Factory Program command MEMORY ORGANIZATION – Multiple Bank Memory Array: 8 Mbit Banks – Parameter Blocks (Top or Bottom location) DUAL OPERATIONS – program/erase in one Bank while read in others – No delay between read and write operations HARDWARE PROTECTION – All Blocks Write Protected when VPP≤ VPPLK SECURITY – Software Security Features – 64-bit Unique Device Identifier – 2112 bits of User-Programmable OTP memory COMMON FLASH INTERFACE (CFI) ■ BGA ■ TBGA64 (ZA) 10 x 13mm ■ ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: M58LT128GST: 88C6h M58LT128GSB: 88C7h ECOPACK® PACKAGE AVAILABLE ■ ■ ■ ■ ■ ■ ■ September 2005 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Rev 1.0 1/98 www.st.com 1 www.DataSheet4U.com M58LT128GST, M58LT128GSB Contents 1 2 Summary description . . . . . . . . . . . . . . . . . . . . ...