FM21L16

www.DataSheet4U.com Preliminary FM21L16 2Mbit FRAM Memory Features 2Mbit Ferroelectric Nonvolatile RAM Organized as 128Kx16 Configurable as 256Kx8 Using /UB, /LB 1014 Read/Write Cycles NoDelay™ Writes Page Mode Operation to 40MHz Advanced High-Reliability Ferroelectric Process SRAM Compatible Industry Std. 128Kx16 SRAM Pinout 60 ns Access Time, 110 ns Cycle Time Advanced Features Low VDD Monitor Protects Memory against Inadvertent Writes Software Programmable Block Write Protect Superior to Battery-backed SRAM Modules No Battery Concerns Monolithic Reliability True Surface Mount Solution, No Rework Steps Superior for Moisture, Shock, and Vibration Low Power Operation 2.7V – 3.6V Power Supply Low Current Mode (5µA) using ZZ pin 18 mA Active Current Industry Standard Configuration Industrial Temperature -40° C to +85° C 44-pin “Green”/RoHS TSOP-II package Description The FM21L16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or FRAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of memory. In-system operation of the FM21L16 is very similar to other RAM devices and can be used as a drop-in replac...