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K3563

Toshiba Semiconductor
Part Number K3563
Manufacturer Toshiba Semiconductor
Description 2SK3563
Published Oct 31, 2007
Detailed Description com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 un...
Datasheet PDF File K3563 PDF File

K3563
K3563

Overview
com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.
3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
5 150 -55~150 A W mJ A mJ °C °C Unit 0.
69±0.
15 2.
8Max V V V 2.
54±0.
25 0.
64±0.
15 2.
54±0.
25 2.
6 Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range ...


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