IGBT
www.DataSheet4U.com
SGP06N60, SGD06N60,
Fast IGBT in NPT-technology
• 75% lower Eoff compared to previous generation co...
Description
www.DataSheet4U.com
SGP06N60, SGD06N60,
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time – 10 µs Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
SGB06N60 SGU06N60
C
G
E
P-TO-251-3-1 (I-PAK) (TO-251AA)
P-TO-252-3-1 (D-PAK) (TO-252AA)
P-TO-220-3-1 (TO-220AB)
P-TO-263-3-2 (D²-PAK) (TO-263AB)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SGP06N60 SGB06N60 SGD06N60 SGU06N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 6 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C
1)
VCE 600V
IC 6A
VCE(sat) 2.3V
Tj 150°C
Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK)
Ordering Code Q67040-S4450 Q67040-S4448 Q67041-A4709 Q67040-S4449
Symbol VCE IC
Value 600 12 6.9
Unit V A
ICpul s VGE EAS
24 24 ±20 34 V mJ
tSC Ptot
10 68
µs W
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Jul-02
www.DataS...
Similar Datasheet
- SGD06N60 IGBT - Infineon Technologies