IGBT
SGP02N120 SGD02N120, SGI02N120
Fast IGBT in NPT-technology
• 40% lower Eoff compared to previous generation • Short cir...
Description
SGP02N120 SGD02N120, SGI02N120
Fast IGBT in NPT-technology
40% lower Eoff compared to previous generation Short circuit withstand time – 10 µs Designed for:
- Motor controls - Inverter - SMPS NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability
C G
E
Qualified according to JEDEC1 for target applications
PG-TO-252-3-11 (D-PAK)
PG-TO-220-3-1
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-262-3-1 (I²-PAK)
Type SGP02N120 SGD02N120 SGI02N120
VCE
IC
Eoff
Tj Marking
Package
1200V 2A 0.11mJ 150°C GP02N120 PG-TO-220-3-1
1200V 2A
0.11mJ 150°C
02N120 PG-TO-252-3-11
1200V 2A 0.11mJ 150°C GI02N120 PG-TO-262-3-1
Maximum Ratings
Parameter
Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 12...
Similar Datasheet
- SGP02N120 IGBT - Infineon Technologies