DatasheetsPDF.com

IXEH40N120 Dataheets PDF



Part Number IXEH40N120
Manufacturers IXYS Corporation
Logo IXYS Corporation
Description NPT3 IGBT
Datasheet IXEH40N120 DatasheetIXEH40N120 Datasheet (PDF)

IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Con.

  IXEH40N120   IXEH40N120


Document
IGBT with Reverse Blocking capability IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ. C TO-247 AD G G C E C (TAB) E G = Gate, C = Collector, E = Emitter, TAB = Collector IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot Symbol VCE(sat) VGE(th) I CES IGES QGon Conditions TVJ = 25°C to 150°C TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C Maximum Ratings ±1200 V ± 20 V 55 A 35 A 80 A 600 V 300 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE V CE = V; CES V GE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V VCE = 120V; VGE = 15 V; IC = 35 A 2.3 2.7 V 2.8 V 4 8V 50 µA 3.0 mA 500 nA 90 nC Features • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epoxy of TO-247 package meets UL 94V-0 Applications converters requiring reverse blocking capability: - current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching in the main current path 0526 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-5 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXRH 40N120 IGBT Symbol t d(on) tr t d(off) tf E on Eoff t d(on) tr td(off) tf Eon Eoff Erec int IRM trr RthJC Conditions Characteristic Values (T VJ = 25°C, unless otherwise specified) typ. External diode DSEP30-12 - diagram see Fig. 17 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω 31 ns 54 ns 184 ns 24 ns 3.0 mJ 0.7 mJ Internal diode - diagram see Fig. 18 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω 29.5 ns 47 ns 183 ns 46 ns 19.2 mJ 1.0 mJ 7 mJ IF = 35 A; diC/dt = -50 A/µs; TVJ = 125°C VCE = -600 V; VGE = 15 V 28.5 A 2.1 µs 0.42 K/W Component Symbol T VJ Tstg Md FC Conditions mounting torque mounting force with clip Maximum Ratings -55...+150 °C -55...+125 °C 0.8 - 1.2 Nm 20...120 N Symbol RthCH Weight Conditions with heatsink compound Characteristic Values min. typ. max. 0.25 K/W 6 g TO-247 AD Outline Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0526 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 2-5 IXRH 40N120 IC 70 TJ = 25°C 6A0 50 40 VGE = 19 V 17 V 15 V 13 V 11 V 30 20 10 9V 0 0 2 4 6 V8 VCE Fig. 1 Typical output characteristics IC 70 TJ = 125°C 6A0 50 40 VGE = 19 V 17 V 15 V 13 V 11 V 30 20 9V 10 0 0 2 4 6 V8 VCE Fig. 2 Typical output characteristics IC 90 8A0 VCE = 20 V 70 60 50 40 TJ = 125°C 30 20 TJ = 25°C TJ = -40°C 10 0 5 6 7 8 9 10 11 1V2 13 VGE Fig. 3 Typical transfer characteristics VCE 5 V 4 IC = 70 A 3 IC = 35 A 2 IC = 17.5 A 1 VGE = 15 V 0 -50 -25 0 25 50 75 100 1°2C5 150 TVJ Fig. 4 Typ. collector emitter saturation as a function of case temperature 15 mJ 12 Eon 9 VCE = 600 V VGE = ±15 V RG = 15 Ω TJ = 125°C 350 tr ns 280 t 210 6 140 Eon 3 70 td(on) 0 0 0 10 20 30 40 50 60 70 A IC Fig. 5 Typ. turn on energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17) 3 mJ Eoff 2 240 td(off) ns 160 t 1 Eoff VCE = 600 V VGE = ±15 V RG = 15 Ω 80 TJ = 125°C tf 0 0 0 10 20 30 40 50 60 70 A IC Fig. 6 Typ. turn off energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17) 0526 IXYS reserves the right to change limits, test conditions and dimensions. © 2005 IXYS All rights reserved 3-5 IXRH 40N120 14 m12J Eon 10 8 VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C tr td(on) 140 1n2s0 100 t 80 6 60 4 40 Eon 2 20 0 0 0 20 40 60 80 Ω 100 RG Fig. 7 Typ. turn on energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (Fig. 17) 50 mJ Eon 40 Erecint 30 VCE = 600 V VGE = ±15 V RG = 15 Ω TJ = 125°C 20 Eon tr td(on) 150 ns 120 t 90 60 10 0 0 Erec int 20 40 30 0 60 80 A IC Fig. 9 Typ. turn on energy and switching times vs. co.


40N120 IXEH40N120 IXEH40N120D1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)