Document
IGBT with Reverse Blocking capability
IXRH 40N120
VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.3 V typ.
C
TO-247 AD
G
G
C E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
Symbol
VCE(sat)
VGE(th) I
CES
IGES QGon
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH TC = 25°C
Maximum Ratings
±1200
V
± 20
V
55
A
35
A
80
A
600
V
300
W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 30 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
IC = 2 mA; VGE = VCE
V CE
=
V; CES
V GE
=
0
V;
TVJ
=
25°C
TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
VCE = 120V; VGE = 15 V; IC = 35 A
2.3 2.7 V
2.8
V
4
8V
50 µA
3.0
mA
500 nA
90
nC
Features
• IGBT with NPT (non punch through) structure
• reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery
• positive temperature coefficient of saturation voltage
• Epoxy of TO-247 package meets UL 94V-0
Applications
converters requiring reverse blocking capability:
- current source inverters - matrix converters - bi-directional switches - resonant converters - induction heating - auxiliary switches for soft switching
in the main current path
0526
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
1-5
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
IXRH 40N120
IGBT
Symbol
t d(on)
tr t
d(off)
tf E
on
Eoff
t d(on)
tr td(off) tf Eon Eoff Erec int IRM trr
RthJC
Conditions
Characteristic Values
(T VJ
=
25°C,
unless
otherwise
specified)
typ.
External diode DSEP30-12 - diagram see Fig. 17
Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω
31 ns 54 ns 184 ns 24 ns 3.0 mJ 0.7 mJ
Internal diode - diagram see Fig. 18
Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω
29.5 ns 47 ns
183 ns 46 ns
19.2 mJ 1.0 mJ 7 mJ
IF = 35 A; diC/dt = -50 A/µs; TVJ = 125°C VCE = -600 V; VGE = 15 V
28.5 A 2.1 µs
0.42 K/W
Component
Symbol
T VJ
Tstg
Md FC
Conditions
mounting torque mounting force with clip
Maximum Ratings
-55...+150
°C
-55...+125
°C
0.8 - 1.2
Nm
20...120
N
Symbol
RthCH Weight
Conditions with heatsink compound
Characteristic Values min. typ. max.
0.25
K/W
6
g
TO-247 AD Outline
Dim. Millimeter Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13 b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
0526
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-5
IXRH 40N120
IC
70
TJ = 25°C
6A0
50
40
VGE = 19 V 17 V 15 V 13 V 11 V
30
20
10
9V
0
0
2
4
6 V8
VCE
Fig. 1 Typical output characteristics
IC
70 TJ = 125°C
6A0
50
40
VGE = 19 V
17 V 15 V 13 V
11 V
30
20 9V
10
0
0
2
4
6 V8
VCE
Fig. 2 Typical output characteristics
IC
90 8A0 VCE = 20 V
70
60
50
40
TJ = 125°C
30
20
TJ = 25°C
TJ = -40°C
10
0 5 6 7 8 9 10 11 1V2 13
VGE
Fig. 3 Typical transfer characteristics
VCE
5 V 4
IC = 70 A 3
IC = 35 A 2
IC = 17.5 A 1
VGE = 15 V
0 -50 -25 0 25 50 75 100 1°2C5 150
TVJ
Fig. 4 Typ. collector emitter saturation as a function of case temperature
15 mJ
12 Eon
9
VCE = 600 V VGE = ±15 V RG = 15 Ω TJ = 125°C
350
tr
ns
280
t 210
6
140
Eon
3
70
td(on)
0
0
0 10 20 30 40 50 60 70 A
IC
Fig. 5 Typ. turn on energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17)
3
mJ Eoff
2
240
td(off)
ns 160 t
1 Eoff
VCE = 600 V
VGE = ±15 V
RG = 15 Ω
80
TJ = 125°C
tf
0
0
0 10 20 30 40 50 60 70 A
IC
Fig. 6 Typ. turn off energy and switching times vs. collector current, inductive switching with ext. free wheeling diode (Fig. 17)
0526
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
3-5
IXRH 40N120
14 m12J Eon 10
8
VCE = 600 V VGE = ±15 V IC = 35 A TJ = 125°C
tr
td(on)
140 1n2s0 100 t 80
6
60
4
40
Eon
2
20
0
0
0
20
40
60
80 Ω 100
RG
Fig. 7 Typ. turn on energy and switching times vs. gate resistor, inductive switching with ext. free wheeling diode (Fig. 17)
50
mJ Eon 40 Erecint
30
VCE = 600 V VGE = ±15 V RG = 15 Ω TJ = 125°C
20
Eon
tr td(on)
150 ns 120
t 90
60
10
0 0
Erec int
20
40
30
0
60
80 A
IC
Fig. 9 Typ. turn on energy and switching times vs. co.