DF2S12FU

TOSHIBA Diodes for Protecting against ESD DF2S12FU Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Two-pin ultra-small packages are suitable for higher mounting densities. Small total capacitance: CT = 15pF (typ.) DF2S12FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol Rating Unit P 150 mW Tj 125 °C Tstg −55 to 125 °C USC JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 4.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance Symbol VZ ZZ ZZK IR CT Test Condition IZ = 5mA IZ = ...