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TN2010T
N-Channel Enhancement-Mode MOSFET Transistor
Product Summary
V(BR)DSS Min (V)
200
rDS(on) Max (W)
11
VGS(th) (V)
0.8 to 3.0
ID (A)
0.12
Features
D D D D D Low On-Resistance: 9.5 W Secondary Breakdown Free: 220 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability
Benefits
D D D D D Low Offset Vo...
