KMB6D0DN30QA

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB6D0DN30QA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. D P G H T L FEATURES VDSS=30V, ID=6A. Drain-Source ON Resistance. RDS(ON)=28m RDS(ON)=42m (Max.) @VGS=10V (Max.) @VGS=4.5V B1 B2 1 4 8 5 A Super High Dense Cell Design High Power and Current Handing Capability DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 MAXIMUM RATING (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current 25 Drain Power Dissipation 100 Maximum Junction Temperature Storage Temperature Range Unless otherwise noted) SYMBOL VDSS VGSS ID * (note1) PATING 30 20 6 20 1.3 2 UNIT V V A A A W W FLP-8 IDP IS PD * 1.6 Tj Tstg RthJA* -50~150 -50~150 78 Thermal Resistance, Junction to Ambient * : Surface Mounted on FR4 Board, t 10sec. /W PIN CONNECTION (TOP VIEW) S1 G1 S2 G2 1 8 D1 D1 D2 D2 1 8 7 6 5 2 7 2 3 3 6 4 5 4 2007. 4. 3 Revision No : 0 1/5 KMB6D0DN30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Cur...