KMB3D5PS30QA

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB010P30QA P-Ch Trench MOSFET GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance,, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D P G H T L FEATURES VDSS=-30V, ID=-10A. Drain-Source ON Resistance. RDS(ON)=20m (Max.) @ VGS=-10V RDS(ON)=28m (Max.) @ VGS=-4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC Drain Current Pulsed Drain Source Diode Forward Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Surface Mounted on FR4 Board Unless otherwise noted) SYMBOL PATING VDSS VGSS ID* IDP IS P D* Tj Tstg RthJA* -30 25 -10 -50 -1.7 2.0 150 -55~150 62.5 /W UNIT V V A A A W DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.05 FLP-8 KMB010P 30QA 709 PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2007. 6. 29 Revision No : 1 1/4 KMB010P30QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance On-State Drain Current Forward Transconductance Dynamic Input Cap...