DP100

www.DataSheet4U.com Semiconductor DP100 PNP Silicon Transistor Features Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.25V Typ. @IC/IB=-400mA/-20mA) Suitable for low voltage large current drivers Complementary pair with DN100 Switching Application Ordering Information Type NO. DP100 Marking DP100 Package Code TO-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9089-000 1 www.DataSheet4U.com DP100 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -15 -12 -5 -1 625 150 -55~150 Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Test Condition IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-12V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-1A IC=-400mA, IB=-20mA IC=-400mA, IB=-20mA VCE=-5V, IC=-50mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -15 -12 -5 200 70 330 9 -0.1 -0.1 450 -0.3 -1.2 - Unit V V V μA μA V V MHz pF KST-9089-000...