ON2179

www.DataSheet4U.com Reflective Photosensors (Photo Reflectors) CNZ2179 (ON2179) Reflective Photosensor Unit : mm Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor is used as the light detecting element. 5.2 13.0 Long focal distance : 6 mm (typ.) Visible light cutoff resin is used (7.6) 1 (2-0.5) (2-0.5) (2.54) 4 Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Output (Photo Collector to emitter voltage transistor) Emitter to collector voltage Collector power dissipation Temperature *1 *2 Symbol Ratings VR IF PD*1 IC VCEO VECO PC*2 Topr Tstg 3 50 75 20 20 5 100 –25 to +80 –30 to +85 Unit V mA mW mA V V mW ˚C ˚C Reverse voltage (DC) 2 (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference Operating ambient temperature Storage temperature Input power derating ratio is 1.25 mW/˚C at Ta ≥ 25˚C. Output power derating ratio is 1.67 mW/˚C at Ta ≥ 25˚C. Electrical Characteristics (Ta = 25˚C) Parameter Forward voltage (DC) Input characteristics Reverse current (DC) Output characteristics Collector cutoff current Symbol VF IR ICEO IC*1 IF = 50mA VR = 3V VCE = 10V 180 20 0.5 Conditions min typ 1.3 max 1.5 10 0.2 1500 Unit V µA µA µA µs V Collector current VCC = 5V, IF = 20mA, RL = 100Ω Transfer Response time tr*2 , tf*3 VCC = 10V, IC = 0...