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GM2907A Dataheets PDF



Part Number GM2907A
Manufacturers GTM
Logo GTM
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet GM2907A DatasheetGM2907A Datasheet (PDF)

www.DataSheet4U.com CORPORATION GM2907A Description Features Low Collector Saturation Voltage High Speed Switching For Complementary Use With NPN Type GM2222A ISSUED DATE :2004/12/22 REVISED DATE : P NP EP ITAX I AL P L ANAR T RANS ISTO R The GM2907A is designed for general purpose amplifier and high speed switching, medium-power switching applications. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K.

  GM2907A   GM2907A



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www.DataSheet4U.com CORPORATION GM2907A Description Features Low Collector Saturation Voltage High Speed Switching For Complementary Use With NPN Type GM2222A ISSUED DATE :2004/12/22 REVISED DATE : P NP EP ITAX I AL P L ANAR T RANS ISTO R The GM2907A is designed for general purpose amplifier and high speed switching, medium-power switching applications. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Unit Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage at Ta=25 Collector to Emitter Voltage at Ta=25 Emitter to Base Voltage at Ta=25 Collector Current at Ta=25 Total Power Dissipation at Ta=25 Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 -60 -60 -5 -600 1.2 V V V mA W Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEX *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob at Ta = 25 Min. -60 -60 -5 75 100 100 100 50 200 Typ. -0.2 -0.5 Max. -10 -50 -0.4 -1.6 -1.3 -2.6 300 8.0 MHz pF Unit V V V nA nA V V mV V IC=-10uA IC=-10mA IE=-10uA VCE=-50V VCE=-30V, V BE=-0.5V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA VCE=-10V, IC =-0.1mA VCE=-10V, IC =-1mA VCE=-10V, IC =-10mA VCE=-10V, IC =-150mA VCE=-10V, IC =-500mA VCE=-20V, IC =-50mA, f=100MHz VCE=-10V, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions 1/2 www.DataSheet4U.com CORPORATION Characteristics Curve ISSUED DATE :2004/12/22 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2 .


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