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SPP04N80C3 Dataheets PDF



Part Number SPP04N80C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPP04N80C3 DatasheetSPP04N80C3 Datasheet (PDF)

CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPP04N80C3 800 V 1.3 Ω 23 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. acti.

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CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPP04N80C3 800 V 1.3 Ω 23 nC PG-TO220-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type SPP04N80C3 Package PG-TO220-3 Marking 04N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Pulsed drain current2) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C=100 °C T C=25 °C I D=0.8 A, V DD=50 V I D=4 A, V DD=50 V V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.91 page 1 Value 4 2.5 12 170 0.1 4 50 ±20 ±30 63 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2011-09-28 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt SPP04N80C3 Value 4 12 4 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10s min. Values typ. Unit max. - - 2 K/W - - 62 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 800 - -V Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=4 A - 870 - Gate threshold voltage V GS(th) V DS=V GS, I D=0.24 mA 2.1 3 3.9 Zero gate voltage drain current I DSS V DS=800 V, V GS=0 V, T j=25 °C - - 10 µA Gate-source leakage current Drain-source on-state resistance V DS=800 V, V GS=0 V, T j=150 °C I GSS V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=2.5 A, T j=25 °C - 50 - 100 nA 1.1 1.3 Ω Gate resistance V GS=10 V, I D=2.5 A, T j=150 °C - 3 - R G f =1 MHz, open drain - 1.2 - Ω Rev. 2.91 page 2 2011-09-28 SPP04N80C3 Parameter Symbol Conditions min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance C iss V GS=0 V, V DS=100 V, - 570 - pF C oss f =1 MHz - 25 - Effective output capacitance, energy related5) C o(er) Effective output capacitance, time related6) C o(tr) V GS=0 V, V DS=0 V to 480 V - 19 - 51 - Turn-on delay time Rise time Turn-off delay time Fall time t d(on) - 25 - ns t r V DD=400 V, - 15 - V GS=0/10 V, I D=4 A, t d(off) R G=22 ? , T j=25 °C - 72 - t f - 12 - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd V DD=640 V, I D=4A, Q g V GS=0 to 10 V V plateau - 3 - nC - 12 - 23 31 - 5.5 - V Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current V SD V GS=0 V, I F=I S=4 A, T j=25 °C - t rr - Q rr V R=400 V, I F=I S=4 A, di F/dt =100 A/µs - I rrm - 1 1.2 V 520 - ns 4 - µC 12 - A 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak


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