CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPP04N80C3
800 V 1.3 Ω 23 nC
PG-TO220-3
CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward )
Type SPP04N80C3
Package PG-TO220-3
Marking 04N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
Gate source voltage
V GS
T C=25 °C T C=100 °C T C=25 °C I D=0.8 A, V DD=50 V I D=4 A, V DD=50 V
V DS=0…640 V static
AC (f >1 Hz)
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.91
page 1
Value 4 2.5 12
170 0.1 4 50 ±20 ±30 63 -55 ... 150 60
Unit A
mJ
A V/ns V
W °C Ncm 2011-09-28
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
SPP04N80C3
Value 4 12 4
Unit A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient
R thJA
leaded
Soldering temperature, wave soldering only allowed at leads
T sold
1.6 mm (0.063 in.) from case for 10s
min.
Values typ.
Unit max.
- - 2 K/W - - 62 - - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
800
-
-V
Avalanche breakdown voltage
V (BR)DS V GS=0 V, I D=4 A
- 870 -
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.24 mA 2.1 3 3.9
Zero gate voltage drain current
I DSS
V DS=800 V, V GS=0 V, T j=25 °C
-
- 10 µA
Gate-source leakage current Drain-source on-state resistance
V DS=800 V, V GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=2.5 A, T j=25 °C
-
50 - 100 nA 1.1 1.3 Ω
Gate resistance
V GS=10 V, I D=2.5 A, T j=150 °C
-
3
-
R G f =1 MHz, open drain - 1.2 - Ω
Rev. 2.91
page 2
2011-09-28
SPP04N80C3
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Dynamic characteristics
Input capacitance Output capacitance
C iss V GS=0 V, V DS=100 V, - 570 - pF
C oss
f =1 MHz
- 25 -
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time related6)
C o(tr)
V GS=0 V, V DS=0 V to 480 V
- 19 - 51 -
Turn-on delay time Rise time Turn-off delay time Fall time
t d(on)
- 25 - ns
t r V DD=400 V,
- 15 -
V GS=0/10 V, I D=4 A,
t d(off)
R G=22 ? , T j=25 °C
-
72
-
t f - 12 -
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Q gs
Q gd V DD=640 V, I D=4A, Q g V GS=0 to 10 V
V plateau
- 3 - nC - 12 - 23 31 - 5.5 - V
Reverse Diode
Diode forward voltage
Reverse recovery time Reverse recovery charge Peak reverse recovery current
V SD
V GS=0 V, I F=I S=4 A, T j=25 °C
-
t rr -
Q rr
V R=400 V, I F=I S=4 A, di F/dt =100 A/µs
-
I rrm -
1 1.2 V
520 - ns 4 - µC 12 - A
1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak