SPP02N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP02N60S5 VDS RDS(on) ID 600 V 3 Ω 1.8 A PG-TO220 2 P-TO220-3-1 23 1 Type SPP02N60S5 Package PG-TO220 Ordering Code Q67040-S4181 Marking 02N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature IAR VGS VGS Ptot Tj , Tstg Value Unit A 1.8 1.1 3.2 50 mJ 0.07 1.8 A ±20 V ±30 25 W -55... +150 °C Rev. 2.6 Page 1 2007-08-30 SPP02N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 1.8 A, Tj = 125 °C Symbol dv/dt Value 20 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 5 K/W - - 62 - - 62 - 35 - - - 260 °C Elect...