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PROCESS
Power Transistor
CP208
Central
TM
NPN - Amp/Switch Transistor Chip
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,630 PRINCIPAL DEVICE TYPES CJD31C MJE182 TIP31C EPITAXIAL BA...
