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IRFNG50 Dataheets PDF



Part Number IRFNG50
Manufacturers International Rectifier
Logo International Rectifier
Description POWER MOSFET N-CHANNEL
Datasheet IRFNG50 DatasheetIRFNG50 Datasheet (PDF)

Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1556 HEXFET® POWER MOSFET 1000 Volt, 2.0Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electr.

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Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1556 HEXFET® POWER MOSFET 1000 Volt, 2.0Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits. The Surface Mount Device (SMD-1) package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increasing the size of the termination pads, thereby enhancing thermal and electrical performance. IRFNG50 N-CHANNEL Product Summary Part Number IRFNG50 BV DSS 1000V RDS(on) 2.0Ω ID 5.5A Features: s s s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current Œ Repetitive Avalanche Energy Œ Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight IRFNG50 5.5 3.5 22 150 1.2 ±20 860 5.5 15.0 1.0 -55 to 150 300 (for 5 seconds) 2.6 (typical) Units A W W/K  V mJ A mJ V/ns oC g To Order Previous Datasheet www.DataSheet4U.com Index Next Data Sheet IRFNG50 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS /∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min. 1000 — — — 2.0 5.2 — — — — 87 8.7 49 — — — — — Typ. Max. Units — 1.4 — — — — — — — — — — — — — — — 2.0 — — 2.0 2.25 4.0 — 25 250 100 -100 200 20 110 30 44 210 60 — V V/°C Ω V S( ) µA nA nC Ω Test Conditions VGS = 0V, ID = 1.0 mA Reference to 25°C, ID = 1.0 mA VGS = 10V, ID = 3.5A  VGS = 10V, ID = 5.5A VDS = VGS, ID = 250µA VDS > 15V, IDS = 3.5A  VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 5.5A VDS = Max. Rating x 0.5 see figures 6 and 13 VDD = 500V, ID = 5.5A, RG = 2.35Ω, VGS = 10V see figure 10 Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance ns LS Internal Source Inductance — 6.5 — nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 2400 240 80 — — — pF VGS = 0V, VDS = 25V f = 1.0 MHz see figure 5 Source-Drain Diode Ratings and Characteristics Parameter IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Œ Min. Typ. Max. Units — — — — 5.5 22 Test Conditions Modified MOSFET symbol showing the integral reverse p-n junction rectifier. A VSD t rr Q RR t on Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Tj = 25°C, IS = 5.5A, VGS = 0V  Tj = 25°C, IF = 5.5A, di/dt ≤ 100A/µs VDD ≤ 50V  Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD. — — — — — — 1.8 1200 8.4 V ns µC Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min. Typ. Max. Units — — — TBD 0.83 — K/W Test Conditions Soldered to a copper clad PC board To Order Previous Datasheet www.DataSheet4U.com Index Next Data Sheet IRFNG50 Device Fig. 1 — Typical Output Characteristics TC = 25°C Fig. 2 — Typical Output Characteristics TC = 150°C I D = 5.5A Fig. 3 — Typical Transfer Characteristics Fig. 4 — Normalized On-Resistance Vs.Temperature ID = 5.5A Fig. 5 — Typical Capacitance Vs. Drain-to-Source Voltage Fig. 6 — Typical Gate Charge Vs. Gate-to-Source Voltage To Order Previous Datasheet www.DataSheet4U.com Index Next Data Sheet IRFNG50 Device 100 OPERATION IN THIS AREA LIMITED BY R.


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