(S5688x) SILICON RECTIFIER DIODES
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S5688B/G/J/N
PRV : 100 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability ...
Description
www.DataSheet4U.com
S5688B/G/J/N
PRV : 100 - 1000 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free
SILICON RECTIFIER DIODES R-1
0.099 (2.51) 0.095 (2.42)
1.00 (25.4) MIN.
0.138 (3.5) 0.114 (2.9)
MECHANICAL DATA :
* Case : Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram
0.024 (0.6) 0.020 (0.5)
1.00 (25.4) MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 50 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum DC Blocking Voltage Maximum Average Forward Current Maximum Peak Forward Surge Current Single half sine wave superimposed on rated load (JEDEC Method) Maximum Forward Voltage drop per diode at IF = 1.0 A Repetitive Peak Reverse Current Junction Temperature Range Storage Temperature Range
SYMBOL S5688B S5688G S5688J S5688N VRRM VRMS VDC IF(AV)
(50Hz) (60Hz)
UNIT V V V A
100 70 100
400 280 400 1.0
600 420 600
1000 700 1000
(50Hz)
(60Hz)
IFSM VF IRRM TJ TSTG
45
49 1.2 10
30
33
A V µA °C °C
- 40 to + 150 - 40 to + 150
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