InGaAlP Laser Diode
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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65D6SA
Signature of Approval
Ap...
Description
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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL65D6SA
Signature of Approval
Approvaed by Checked by Issued by
Approval by Customer
315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836
WWW.QSILaser.com
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QL65D6SA
InGaAlP Laser Diode
Quantum Semiconductor International Co., Ltd.
2003. Rev 0
♦OVERVIEW
QL65D6SA is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader.
♦APPLICATION
- Optical Leveler - Laser Module - Bar Code Reader
♦FEATURES
- Visible Light Output - Optical Power Output - Package Type : : : λp = 650 nm 5mW CW TO-18 (5.6mmφ)
- Built-in Photo Diode for Monitoring Laser Diode
♦ELECTRICAL CONNECTION
Bottom View
Pin Configuration
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♦ABSOLUTE MAXIMUM RATING at Tc=25°C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature
Symbols P V V Topr Tstg
Values 5 2 30 −10 ~ +60 −40 ~ +85
Unit mW V V °C °C
♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C
Items
Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence
Symbols
Po Ith Iop SE Vop
Min.
0.4 650 7 26 0.1
Typ. Max.
5 30 40 0.5 2.2 655 8.5 28 0.2 45 55 0.8 2.6 660 10 32 ±1.5 ±2.5 0.5 10 10
Unit
mW mA mA mW/mA V nm deg deg deg...
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