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QL65D6SA

Roithner Lasertechnik

InGaAlP Laser Diode

www.DataSheet4U.com QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Ap...


Roithner Lasertechnik

QL65D6SA

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www.DataSheet4U.com QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65D6SA Signature of Approval Approvaed by Checked by Issued by Approval by Customer 315-9, Chunheung-ri, Sungger-eup, Chunan-city, Chungnam, Korea 330-836 WWW.QSILaser.com www.DataSheet4U.com QL65D6SA InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. 2003. Rev 0 ♦OVERVIEW QL65D6SA is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader. ♦APPLICATION - Optical Leveler - Laser Module - Bar Code Reader ♦FEATURES - Visible Light Output - Optical Power Output - Package Type : : : λp = 650 nm 5mW CW TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration www.DataSheet4U.com ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 5 2 30 −10 ~ +60 −40 ~ +85 Unit mW V V °C °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Optical Output Power Threshold Current Operating Current Slope Efficiency Operating Voltage Lasing Wavelength Beam Divergence Symbols Po Ith Iop SE Vop Min. 0.4 650 7 26 0.1 Typ. Max. 5 30 40 0.5 2.2 655 8.5 28 0.2 45 55 0.8 2.6 660 10 32 ±1.5 ±2.5 0.5 10 10 Unit mW mA mA mW/mA V nm deg deg deg...




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