InGaAlP Laser Diode
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QL65D5SA
InGaAlP Laser Diode
2002
♦ OVERVIEW
QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser ...
Description
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QL65D5SA
InGaAlP Laser Diode
2002
♦ OVERVIEW
QL65D5SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Pointer and Bar Code Reader.
♦ APPLICATION
Optical Leveler Laser Module Bar Code Reader
♦ FEATURES
Visible Light Output Package Type : :
λp = 650 nm
Optical Power Output :
5 mW cw TO-18
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
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♦ ABSOLUTE MAXIMUM RATING at Tc = 25 °C
Items
Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature
Symbols
P
Values
7
Unit
mW
V
2
V
V
30
V
Topr Tstg
-10 .. +50 -40 .. +85
°C °C
♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc = 25 °C
Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength Symbols Po Ith Iop Vop λp Min.
650 6 22 0.1 0.2 -
Typ.
5 24 32 2.2 655 9 31 -
Max.
35 40 2.6 660 15 38 2 3 0.5 60
Unit
mW mA mA V nm deg deg deg deg mA
Condition
Po = 5 mW Po = 5 mW Po = 5 mW Po = 5 mW Po = 5 mW Po = 5 mW Po = 5 mW Po = 5 mW
θII
Beam Divergence
θ⊥ ∆ θ II
Beam Angle
∆ θ⊥
Im
Monitor Current Optical Distance
∆X, ∆Y, ∆Z
µm
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♦ PACKAGE DIMENSION (mm)
ROITHNER LASERTECHNIK, A-1040 Vienna, Austria, Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0, Fax.: +43-1-...
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