InGaAlP Laser Diode
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QL63F5SA
InGaAlP Laser Diode
2002
♦ OVERVIEW
QL63F5SA is a MOCVD grown 635 nm band InGaAlP laser ...
Description
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QL63F5SA
InGaAlP Laser Diode
2002
♦ OVERVIEW
QL63F5SA is a MOCVD grown 635 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10 mW for optoelectronic devices such as Optical Leveler and Modules.
♦ APPLICATION
- Optical Leveler - Optical Module - Bar Code Reader
♦ FEATURES
- Visible Light Output: λp = 635 nm (TM Mode) - Optical Power Output: 10 mW CW - Package Type: TO-18 (5.6 mmφ ) - Built-in Photo Diode for Monitoring Laser Diode
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
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♦ ABSOLUTE MAXIMUM RATING at Tc=25° C
Items Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Storage Temperature Symbols P V V Topr Tstg Values 12 2 30 −10 ~ +50 −40 ~ +85 Unit mW V V °C °C
♦ ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25° C
Items Optical Output Power Threshold Current Operating Current Operating Voltage Lasing Wavelength Symbols Po Ith Iop Vop λp Min.
630 7 22 0.2 -
Typ. Max.
10 40 55 2.2 637 8 32 0.4 50 70 2.7 645 12 40 ±1.5 ±2.5 0.8 ±60
Unit
mW mA mA V nm deg deg deg deg mA µm
Condition
Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW Po = 10 mW -
θ
Beam Divergence
θ⊥ ∆θ
Beam Angle
∆θ ⊥
Im
Monitor Current Optical Distance
∆X, ∆Y, ∆Z
NOTICE : QL63F5SA to be operated on APC circuit. The above product specifications are subject to change without notice.
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