MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY FEATURES
5.0V ± 10% for read, erase and write operation 131072x8 only organization Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum active current(5MHz) - 1uA typical standby current Command register architecture - Byte Programming (7us typical) - Sector Erase (8K-Byte x 1, 4K-Byt...
