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Absolute Maximum Ratings VOLTAGE RATINGS
VDRM VDSM VRRM VRSM Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse voltage, (note 1) Non-repetitive peak reverse voltage, (note 1)
Date:- 14 Jun, 2001 Data Sheet Issue:- 1
Distributed Gate Thyristor Types R1271NS10x to R1271NS12x
MAXIMUM LIMITS
1000-1200 1000-1200 1000-1200 1100-1300
UNITS
V V V V
OTHER RATINGS
IT(AV) IT(AV) IT(AV) IT(RMS) IT(d.c.) ITSM ITSM2 It It diT/dt VRGM PG(AV) PGM VGD THS Tstg
2 2
MAXIMUM LIMITS
1271 821 458 2599 2050 18.0 19.8 1.62×10 1.96×10 1000 1500 5 2 30 0.25 -40 to +125 -40 to +150
6 6
UNITS
A A A A A kA kA As As A/µs A/µs V W W V °C °C
2 2
Mean on-state current, Tsink=55°C, (note 2) Mean on-state current. Tsink=85°C, (note 2) Mean on-state current. Tsink=85°C, (note 3) Nominal RMS on-state current, Tsink=25°C, (note 2) D.C. on-state current, Tsink=25°C, (note 4) Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5) Peak non-repetitive surge tp=10ms, VRM≤10V, (note 5) I t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5) I t capacity for fusing tp=10ms, VRM≤10V, (note 5)
2 2
Maximum rate of rise of on-state current (repetitive), (Note 6) Maximum rate of rise of on-state current (non-repetitive), (Note 6) Peak reverse gate voltage Mean forward gate power Peak forward gate power Non-trigger gate voltage, (Note 7) Operating temperature range Storage temperature range
Notes:1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C. 2) Double side cooled, single phase; 50Hz, 180° half-sinewave. 3) Single side cooled, single phase; 50Hz, 180° half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125°C Tj initial. 6) VD=67% VDRM, IFG=2A, tr≤0.5µs, Tcase=125°C. 7) Rated VDRM.
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
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June, 2001
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Characteristics
R1271NS10x to R1271NS12x
PARAMETER
VTM V0 rS dv/dt IDRM IRRM VGT IGT IH tgd tgt Qrr Qra Irm trr tq Maximum peak on-state voltage Threshold voltage Slope resistance Critical rate of rise of off-state voltage Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Holding current Gate controlled turn-on delay time Turn-on time Recovered charge Recovered charge, 50% Chord Reverse recovery current Reverse recovery time, 50% chord Turn-off time (note 2)
MIN.
200 20
TYP. MAX. TEST CONDITIONS (Note 1)
0.5 1.0 200 120 85 2.0 510 2.02 1.547 0.237 150 150 3.0 300 VD=80% VDRM, Linear ramp Rated VDRM Rated VRRM Tj=25°C Tj=25°C VD=10V, IT=2A ITM=2000A
UNITS
V V mΩ V/µs mA V mA mA µs µC
1000 Tj=25°C 1.0 2.0 150 ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/µs ITM=1000A, tp=1000µs, di/dt=60A/µs, 25 Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/µs 0.024 Double side cooled 22 0.048 Single side cooled 26 ITM=1000A, tp=1000µs, di/dt=60A/µs, Vr=50V VD=67%VDRM, ITM=2000A, di/dt=60A/µs, IFG=2A, tr≤0.5µs, Tcase=25°C
µC A µs µs
Rth(j-hs) Thermal resistance, junction to heatsink F Wt Mounting force Weight
19 -
K/W kN g
Notes:1) Unless otherwise indicated Tj=125°C. 2) The required tq (specified with dVdr/dt=200V/µs) is represented by ‘x’ in the device part number. See ordering information for details of tq codes.
Introduction The R1271 series of Distributed Gate thyristors have fast switching characteristics provided by a regenerative, interdigitated gate. They also exhibit low switching losses and are therefore suitable for medium current, medium frequency applications.
Data Sheet. Types R1271NS10x to R1271NS12x Issue 1
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June, 2001
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Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 10 12 VDRM VDSM VRRM V 1000 1200 VRSM V 1100 1300
R1271NS10x to R1271NS12x
VD VR DC V 700 810
2.0 Extension of Voltage Grades This report is applicable to other and higher voltage grades when supply has been agreed by Sales/Production. 3.0 Extension of Turn-off Time This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by Sales/Production. 4.0 Repetitive dv/dt Higher dv/dt selections are available up to 1000V/µs on request. 5.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 1500A/µs at any time during turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 1000A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Square wave ratings These ratings are given for load component rate of rise of forward current of 100 and 500A/µs. 8.0 Duty cycle lines The 100% duty cycle is represented on all.