Inverting Schmitt-triggers
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INTEGRATED CIRCUITS
DATA SHEET
74HC3G14; 74HCT3G14 Inverting Schmitt-triggers
Product specificatio...
Description
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INTEGRATED CIRCUITS
DATA SHEET
74HC3G14; 74HCT3G14 Inverting Schmitt-triggers
Product specification Supersedes data of 2002 Jul 23 2003 Nov 04
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Philips Semiconductors Product specification
Inverting Schmitt-triggers
FEATURES Wide supply voltage range from 2.0 to 6.0 V High noise immunity Low power dissipation Balanced propagation delays Unlimited input rise and fall times Very small 8 pins package ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from −40 to +85 °C and −40 to +125 °C. DESCRIPTION APPLICATIONS
74HC3G14; 74HCT3G14
Wave and pulse shapers for highly noisy environments Astable multivibrators Monostable multivibrators Output capability: standard.
The 74HC3G/HCT3G14 is a high-speed Si-gate CMOS device. The 74HC3G/HCT3G14 provides three inverting buffers with Schmitt-trigger action. This device is capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns. TYPICAL SYMBOL tPHL/tPLH CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For HC3G14 the condition is VI = GND ...
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