2SD1616A

www.DataSheet4U.com 2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2SD16116 50 60 6.0 1.0 0.75 150 -55 to +150 2SD1616A 60 120 Unit Vdc Vdc Vdc Adc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 2.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 10 uAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, IC=0) Collector Cutoff Current (VCB=60 Vdc, IE=0) Emitter Cutoff Current (VEB= 6.0 Vdc, I C=0) 2SD1616 2SD1616A 2SD1616 2SD1616A Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 50 60 60 120 6.0 Max 0.1 0.1 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw www.DataSheet4U.com 2SD1616 2SD1616A ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC=100 mAdc, VCE=2.0 Vdc) DC Current Gain (IC=1.0 mAdc, VCE= 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter Saturation Voltage (1) (IC= 1.0 mAdc, IB= 50 mAdc) Base-Emitter on Voltage (1) (I C =50mA, VCE =2.0V) Current-Gain-Bandwidth Product (IC= 100 mAdc, VCE=2.0 Vdc, f=30MHz) Output Capacitance (VCB=10V, I E =0V, f= 1MHZ) Cob hFE (1) hFE (2) VCE(sat) VBE(sat) V BE(o...