RQG2001URAQF

www.DataSheet4U.com RQG2001URAQF NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Features Ideal for 2 GHz Band applications. e.g 2.4 GHz WLAN, Digital cordless phone. Low Distortion and Excellent Linearity IP3 at output = +30 dBm typ., P1dB at output = +19 dBm typ., f = 1.8 GHz High Transition Frequency fT = 20 GHz typ. High Collector to Emitter Voltage VCEO = 5 V Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Emitter 2. Collector 3. Emitter 4. Base Note: Marking is “UR-”. Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 13 5 1.5 100 450 note1 150 –55 to +150 Unit V V V mA mW °C °C Notes: 1. Value on PCB (FR-4 : 20 x 20 x 1.0 mm double side) REJ03G1554-0100 Rev.1.00 Aug 10, 2007 Page 1 of 26 RQG2001URAQF Electrical Characteristics (Ta = 25°C) Item DC current transfer ratio Collector output capacitance Reverse Transfer Capacitance Transition Frequency Maximum Available Gain Power Gain Noise Figure 1.8 GHz Symbol hFE Cob Cre fT MAG PG NF P1dB OIP3 Po(sat) Min. 100               Typ 150 0.95 0.5 21 18 15 12 0.9 1.1 +19 +20 +30 +31 +23 +23 Max. 200 1.2              Unit Test Conditions  VCE = 2 V, IC = 50 mA pF VCB = 2 V, IE = 0, f = 1 MHz pF G...