RQA0009TXDQS

www.DataSheet4U.com RQA0009TXDQS Silicon N-Channel MOS FET REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Features High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz) Compact package capable of surface mounting Electrostatic Discharge Immunity Test (IEC Standard, 61000-4-2, Level4) Outline RENESAS Package code: PLZZ0004CA-A (Package Name : UPAK R ) 3 3 2 1 1 4 1. Gate 2. Source 3. Drain 4. Source 2, 4 Note: Marking is “TX”. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: Value at Tc = 25°C Symbol VDSS VGSS ID Pchnote Tch Tstg Ratings 16 ±5 3.2 15 150 –55 to +150 Unit V V A W °C °C This device is sensitive to electro static discharge. An adequate careful handling procedure is requested. REJ03G1520-0100 Rev.1.00 Jul 04, 2007 Page 1 of 12 RQA0009TXDQS Electrical Characteristics (Ta = 25°C) Item Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Output Power Power Added Efficiency Output Power Power Added Efficiency Symbol IDSS IGSS VGS(off) |yfs| Ciss Coss Crss Pout PAE Pout PAE Min. — — 0.15 2.2 — — — 36.8 4.8 60 — — — Typ — — 0.5 3.2 76 40 3.5 37.8 6.0 65 35.2 3.3 60 Max. 15 ±2 0.8 4.4 — — — — — — — ...