PBSS5230T

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat (BISS) transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements Cost effective alternative to MOSFETs in specific applications. APPLICATIONS Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5230T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE(1) 3K* 1 Top view handbook, halfpage PBSS5230T QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −30 −2 −3 220 UNIT V A A mΩ 3 3 1 2 2 MAM256 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5230T − DESCRIPTION plastic surface mounted package; 3 leads VERSION SOT23 2003 Dec 18 2 ...