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DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D088
PBSS5250T 50 V, 2 A PNP low VCEsat (BISS) transisto...
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
ge
M3D088
PBSS5250T 50 V, 2 A
PNP low VCEsat (BISS)
transistor
Product specification 2003 Oct 09
Philips Semiconductors
Product specification
50 V, 2 A
PNP low VCEsat (BISS)
transistor
FEATURES Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM Higher efficiency leading to less heat generation Reduced printed-circuit board requirements Cost effective alternative to MOSFETs in specific applications. APPLICATIONS Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors).
handbook, halfpage
PBSS5250T
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −2 −3 150 UNIT V A A mΩ
3 3 1
DESCRIPTION
PNP BISS
transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters. MARKING TYPE NUMBER PBSS5250T Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5250T − DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) 3H*
1
Top view
2 2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
VERSION SOT23
2003 Oct 09
2...