NTHD3101F

NTHD3101F MOSFET – Power, P-Channel, Schottky Diode, ChipFET, FETKY, Schottky Barrier Diode -20 V, -4.4 A, 4.1 A Features Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package Leadless SMD Package Provides Great Thermal Characteristics Independent Pinout to each Device to Ease Circuit Design Trench P−Channel for Low On Resistance Ultra Low VF Schottky Pb−Free Packages are Available Applications Li−Ion Battery Charging High Side DC−DC Conversion Circuits High Side Drive for Small Brushless DC Motors Power Management in Portable, Battery Powered Products MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State t≤5s Steady State t≤5s TJ = 25°C TJ = 85°C TJ = 25°C TJ = 25°C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD IDM TJ, TSTG −20 ±8.0 −3.2 −2.3 −4.4 1.1 2.1 −13 −55 to 150 V V A W A °C Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 2.5 A TL 260 °C SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Units Peak Repetitive Reverse Voltage DC Blocking Voltage VRRM VR 20 20 V V http://onsemi.com V(BR)DSS −20 V VR MAX 20 V MOSFET RDS(on) TYP 64 mW @ −4.5 V 85 mW @ −2.5 V SCHOTTKY DIODE VF TYP 0.510 V ID MAX −4.4 A IF...