MRF6P9220HR3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 2, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1600 mA, Pout = 47 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 20 dB Drain Efficiency — 30% ACPR @ 750 kHz Offset — - 47.1 dBc in 30 kHz Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Device Designed for Push - Pull Operation Only Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40μ″ Nominal. RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6P9220HR3 880 MHz, 47 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375G - 04, STYLE 1 NI - 860C3 ...