MRF6P24190HR6

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications. Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain — 13.2 dB Drain Efficiency — 46.2% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection RoHS Compliant In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P24190HR6 2450 MHz, 190 W, 28 V CW LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature CW Operation @ TC = 25°C Derate above 25°C Symbol VDSS VGS Tstg TC TJ CW Value - 0.5, +68 - 0.5, +12 - 65 to +150 150 200 250 1.3 Unit Vdc Vdc °C °C °C W W/°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 100°C, 160 W CW Case Temperature 83°C, 40 W CW Symbol RθJC Value (1,2) 0.22 0.24 Unit °C/W 1. MTTF calculator available at http://www.f...