MRF6P18190HR6

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.9 dB Drain Efficiency — 27.5% IM3 @ 10 MHz Offset — - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 41 dBc @ 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched, Controlled Q, for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection Lower Thermal Resistance Package Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications Low Gold Plating Thickness on Leads, 40µ″ Nominal. In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage T...