HAT2179R Datasheet PDF - Renesas Technology

HAT2179R Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low drive current • High d...

HAT2179R Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 8765 1234 4 G 5678 DDDD SSS 123 REJ03G1570-0200 Rev.2.00 Jul 17, 2009 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage Gate to source voltage VDSS 600 VGSS ±30 Drain current Drain peak current ID 0.7 ID Note1 (pulse) 2.0 Body-drain diode reverse drain current IDR 0.7 Body-drain diode reverse drain peak current IDR Note1 (pulse) 2.0 Channel dissipation Pch Note2 2.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A A W °C °C REJ03G1570-0200 Rev.2.00 Jul 17, 2009 Page 1 of 6 HAT2179R Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 600 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 600 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±30 V, VDS = 0 Gate to source cutoff voltage Forward transfer admittance Static drain to source on state VGS(off) 3.0 — 5.0 |yfs| 0.8 1.2 — RDS(on) — 3.5 4.5 V VDS = 10 V, ID = 1 mA S ID = 0.4 A, VDS = 10 V Note3 Ω ID = 0.4 A, ...