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H5N2519P

Part Number	H5N2519P
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Oct 5, 2007
Detailed Description	www.DataSheet4U.com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 ...
Datasheet	H5N2519P PDF File

Overview

www.
DataSheet4U.
com H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.
2.
00 Nov.
19.
2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1.
Gate 2.
Drain (Flange) 3.
Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note3 IAP EARNote3 Pch...

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