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GU88LS02 Dataheets PDF



Part Number GU88LS02
Manufacturers GTM
Logo GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GU88LS02 DatasheetGU88LS02 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive .

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/05 REVISED DATE : GU88LS02 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 5m 75A Description The GU88LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-263 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Features Package Dimensions REF. A b L4 c L3 L1 E Millimeter REF. Min. Max. 4.40 4.80 c2 0.76 1.00 b2 0.00 0.30 B D 0.36 0.5 e 1.50 REF. L 2.29 2.79 9.80 10.4 L2 Millimeter Min. Max. 1.25 1.45 1.17 1.47 8.6 9.0 2.54 REF. 14.6 15.8 0˚ 8˚ 1.27 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 75 62.5 350 96 0.75 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 1.3 62 Unit /W /W GU88LS02 Page: 1/4 ISSUED DATE :2006/01/05 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 25 1.0 Typ. 0.02 29 28 5 19 10 80 37 85 2070 990 300 Max. 3.0 ±100 1 100 5 7 45 3310 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=30A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=45A VGS=4.5V, ID=30A ID=30A VDS=20V VGS=4.5V VDS=15V ID=30A VGS=10V RG=3.3 RD=0.5 VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) gfs IGSS IDSS Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Trr Qrr Min. - Typ. 50 51 Max. 1.3 - Unit V ns nC Test Conditions IS=45A, VGS=0V IS=30A, VGS=0V dI/dt=100A/ s Reverse Recovery Time Reverse Recovery Charge Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GU88LS02 Page: 2/4 ISSUED DATE :2006/01/05 REVISED DATE : Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteri.


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