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GTS217E

Part Number	GTS217E
Manufacturer	GTM
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Oct 5, 2007
Detailed Description	com ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET ...
Datasheet	GTS217E PDF File

Overview

com ISSUED DATE :2004/10/13 REVISED DATE :2006/12/25B GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 22m 7A The GTS217E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
*Low on-resistance *Capable of 2.
5V gate drive *Optimal DC/DC battery application Description Features Package Dimensions REF.
A A1 b c D Millimeter Min.
0.
05 0.
19 0.
09 2.
90 Max.
1.
20 0.
15 0.
30 0.
20 3.
10 REF.
E E1 e L S Millimeter Min.
6.
20 4.
30 0.
45 0° Max.
6.
60 4.
50 0.
75 8° 0.
65 BSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current...

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GTS217E N-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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