GT6924E

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/25 REVISED DATE : GT6924E N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) ID 20V 600m 1A The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Description *Lower on-resistance *Fast Switching Characteristic *Included Schottky Diode Features Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage (MOSFET) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) 3 Continuous Drain Current (MOSFET) Pulsed Drain Current1 (MOSFET) Reverse Voltage (Schottky) Average Forward Current (Schottky) Pulsed Forward Current1 (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM VKA IF IFM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 ±6 1.0 0.8 8 20 0.5 2.0 0.9 0.9 -55 ~ +125 Value 110 110 Unit V V A A A V A A W W Thermal Data Parameter Thermal Resistance Junction-ambient 3 3 (MOSFET) (Schottky) M ax. M ax. Thermal Resistance Junction-ambient Unit /W /W GT6924E Page: 1/4 ISSUED DATE :2006/01/25 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Brea...