MG300Q2YS65H

www.DataSheet4U.com MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications · · · High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA ― ― 2-109C4A Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting ¾ ¾ Weight: 430 g (typ.) Rating 1200 ±20 300 600 300 600 2700 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque A W °C °C V N▪m 1 2003-03-11 MG300Q2YS65H Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Turn-on Switching loss Turn-off Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Eon Eoff IF = 300 A, VGE = 0 IF = 300 A, VGE = -10 V, di/dt = 1000 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 300 A VGE = ±15 V, RG = 2.7 W Tc = 125°C Inductive load VCC = 600 V, IC = 300 A VGE = ±15 V, RG = 2...