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MG200Q2YS65H
IGBT Module Silicon N Channel IGBT
Description
www.DataSheet4U.com MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications Unit: mm · · · High input impedance Enhancement-mode The electrodes are isolated from case. Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 430 g (typ.) ― ― 2-109C4A Maximum Ratings (Tc = 2...
Toshiba Semiconductor
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