MG200Q2YS60A

www.DataSheet4U.com MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A (1200V/200A 2in1) High Power Switching Applications Motor Control Applications · · · · Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.) Equivalent Circuit Ｃ1 5 6 7 FO E1/C2 4 1 2 3 OT FO E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open 1 2001-08-28 MG200Q2YS60A Package Dimensions: 2-123C1B Unit: mm 10.5 0.8 122 1.0 110 0.3 R6 15.3 4– JAPAN E2 C1 5.5 15.24 20.5 0.8 20.5 0.8 25.4 0.5 50 0.3 8– 0.64 4 – 6 16 13 36 0.8 59 0.5 4. 8. VD Open 2.54 7 5 3 1 8 6 4 2 10.5 0.8 3 – M6 20 0.8 26 0.8 26 0.8 36.7 0.8 2 – 3.0 1.0 0.5 1.0 0.3 2.54 C2E1 1.0 0.3 26 119 0.5 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 20 0.8 26 4. 8. 37.5 VD Open Signal Terminal Layout 7 5 8 2.54 25.4 ± 0.6 6 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 3 1 4 2.54 2 2.54 Weight: 375 g 2 2001-08-28 62 1.0 MG200Q2YS60A Maximum Ratings (Ta = 25°C) Stage Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25°C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operatio...